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| v01.0404 MICROWAVE CORPORATION HMC344 Features Broadband Performance: DC - 8.0 GHz Low Insertion Loss: 1.8 dB @ 6.0 GHz Integrated 2:4 TTL Decoder Small Size: 1.08 mm x 1.05 mm x 0.10 mm GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz Typical Applications The HMC344 is ideal for: * Telecom Infrastructure * Microwave Radio & VSAT * Military & Space * Test Instrumentation Functional Diagram General Description The HMC344 is a broadband non-reflective GaAs MESFET SP4T switch chip. Covering DC to 8.0 GHz, this switch offers high isolation and low insertion loss and extends the frequency coverage of Hittite's SP4T switch product line. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to two. The switch operates using a negative control voltage of 0/-5V, and requires a fixed bias of -5V. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (12 mils). 7 SWITCHES - CHIP Electrical Specifications, TA = +25 C, With 0/-5V Control, Vee= -5V, 50 Ohm System Parameter Insertion Loss Frequency DC - 6.0 GHz DC - 8.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 8.0 GHz "On State" "Off State" DC - 2.0 GHz DC - 8.0 GHz DC - 8.0 GHz 0.5 - 8.0 GHz 0.5 - 8.0 GHz DC - 8.0 GHz 35 150 ns ns 44 37 34 30 10 7 7 17 37 Min. Typ. 1.8 1.9 49 42 39 35 14 10 10 21 40 Max. 2.1 2.2 Units dB dB dB dB dB dB dB dB dB dBm dBm Isolation Return Loss Return Loss Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 7 - 20 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0404 MICROWAVE CORPORATION HMC344 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz GaAs MMIC SUB-HARMONICALLY Isolation PUMPED Insertion Loss vs. Temperature 1 + 25C + 85C - 55C MIXER 17 - 25 GHz RF1 RF2 RF3 RF4 0 -10 -20 ISOLATION (dB) 0 INSERTION LOSS (dB) -1 -30 -40 -50 -60 -70 -2 -3 -4 0 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 9 -80 0 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 9 Return Loss 0 0.1 and 1 dB Input Compression Point 25 INPUT COMPRESSION POINT (dBm) 24 23 22 RETURN LOSS (dB) -5 RFC RF1, RF2, RF3, RF4 ON RF1, RF2, RF3, RF4 OFF 7 SWITCHES - CHIP 7 - 21 21 20 19 18 17 16 15 2 3 4 5 1dB Compression Point 0.1dB Compression Point -10 -15 -20 0 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) 6 7 8 9 FREQUENCY (GHz) Input Third Order Intercept Point iNPUT THIRD ORDER INTERCEPT (dBm) 45 44 43 42 41 40 39 38 37 36 35 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) RF1 RF2 RF3 RF4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0404 HMC344 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz Absolute Maximum Ratings Bias Voltage Range (Vee) Control Voltage Range (A & B) Channel Temperature Thermal Resistance (Insertion Loss Path) Thermal Resistance (Terminated Path) Storage Temperature Operating Temperature Maximum Input Power -7.0 Vdc Vee -0.5V to +1.0 Vdc 150 C 143 C/W A High Low High 1,030 C/W -65 to +150 C -40 to +85 C +24 dBm Low Truth Table Control Input B High High Low Low Signal Path State RF COM to: RF1 RF2 RF3 RF4 TTL/CMOS Control Voltages State Low High Bias Condition -3V to 0 Vdc @ 60 uA Typ. -5 to 4.2 Vdc @ 5 uA Typ. Bias Voltage & Current Vee Range= -5.0 Vdc 10% Vee (Vdc) -5.0 Idd (Typ) (mA) 3.0 Idd (Max) (mA) 6.0 7 SWITCHES - CHIP Outline Drawing NOTES: 1. DIMENSIONS IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS 0.004". 3. TYPICAL BOND PAD IS 0.004" SQUARE. 4. TYPICAL BOND PAD SPACING IS 0.006" CENTER TO CENTER. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. 7 - 22 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0404 HMC344 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz Pad Descriptions Pad Number 1, 2, 3, 4, 5, 9 Function RF4, RFC, RF1, RF2, RF3 Description These pads are DC coupled and matched to 50 Ohms. Blocking capacitors are required. Interface Schematic 6 A See truth table and control voltage table. 7 B See truth table and control voltage table. 8 Vee Supply Voltage -5.0 Vdc 10% Die Bottom GND Die bottom must be connected to RF/DC ground. 7 SWITCHES - CHIP 7 - 23 TTL Interface Circuit Note: Control inputs A and B can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and to Vee (pad) of the RF Switch. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0404 HMC344 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz Assembly Diagram 7 SWITCHES - CHIP Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 7 - 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0404 HMC344 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz Notes: 7 SWITCHES - CHIP For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 7 - 25 |
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